ferromagnetic material has a non-volatile magnetic state which is an ideal carrier for information storage. The physical basis of the magnetic memory device is to control the ferromagnetic material through the external field realize the controllable magnetic state change. Among the various external field control methods strain control can change the lattice structure of materials in a large range which is expected to provide a new idea for the realization of new mechanism magnetic storage. At the same time two-dimensional layered magnetic materials (cri3 cr2ge2te6 fe3gete2 etc.) have attracted extensive attention due to their unique physical properties. These materials have natural advantages in device miniaturization are easy to produce strain control so they are ideal materials for strain electronics research.

Miao Feng Cheng bin of Nanjing University / Ji Wei of Renmin University of China cooperated with the team to control the magnetic state of layered magnetic material fe3gete2 (FGT) in situ by using in-plane uniaxial stress. In this work FGT devices were fabricated on flexible substrates then in-situ strain control was carried out by using the self-developed strain device. At the same time the abnormal Hall effect test method was used to observe the change of magnetic state. At the same time because the strain gauge can be integrated on the inserted rod of refrigerator it can be tested under extreme conditions of extremely low temperature (1.5 K) strong magnetic field (12 T). The experimental results show that the in-plane tensile strain can greatly enhance the coercive field Curie temperature of FGT samples which shows a great regulating effect on the magnetic properties. At the same time the transition from paramagnetic sequence to multi domain ferromagnetic sequence from multi domain ferromagnetic sequence to single domain ferromagnetic sequence is realized under tensile strain. Based on the dependence of Curie temperature domain transition temperature strain the boundaries of single domain state multi domain state paramagnetic state in the strain temperature plane were obtained the phase diagrams were drawn. In addition using the strong dependence of coercivity field on strain the researchers have achieved ultra sensitive strain magnetic flip the required strain change is only 0.06%. Finally the team used first principles to calculate the magnetic anisotropy the relationship between magnetic exchange uniaxial strain in FGT samples. The calculated results show that the dependence of the magnetic anisotropy energy on the strain is consistent with that of the coercivity field observed in the experiment while the magnetic exchange interaction does not change significantly under the strain. Therefore the strain regulation behavior observed in the experiment is due to the change of magnetic anisotropy which is mainly attributed to the enhancement of spin orbit coupling effect in FGT samples during lattice deformation. The researchers of

believe that this research shows the unique advantage of strain to realize the physical property control of layered magnetic materials provides a new material selection for strain magnetic memory devices.

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