thermoelectric materials can realize the mutual conversion of heat energy electric energy simply by establishing temperature difference or applying current which has a very important application prospect in thermoelectric power generation semiconductor refrigeration. The conversion efficiency of thermoelectric materials is mainly controlled by the dimensionless thermoelectric merit ZT ZT = σ s2t / (κ e κ L) where σ s κ E κ L are the electrical conductivity Seebeck coefficient electronic thermal conductivity lattice thermal conductivity of the materials Z is the quality factor t is the corresponding absolute temperature. Because the Seebeck coefficient s the electronic thermal conductivity K E the electrical conductivity σ are related to each other it is not easy to improve the thermoelectric merit of the materials. It is necessary to decouple these parameters to improve the thermoelectric properties of the materials. At present
medium temperature thermoelectric materials mainly include PbTe filled skutterudite. However Pb is harmful to the environment while CO is a rare metal. Therefore it is of great significance to study develop new environmental friendly inexpensive medium temperature thermoelectric materials. SNTE a group of Ⅳ - Ⅵ compound semiconductors has the same crystal structure similar energy b structure as PbTe which is expected to be an important substitute for PbTe. However intrinsic SNTE has very high hole concentration (1020-1021 cm-3) high thermal conductivity large energy splitting between heavy valence b light valence b so the thermoelectric performance of intrinsic SNTE is low needs to be optimized.
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