Hexagonalboron nitride, also known as white graphite, has a layered structure that is similar to graphite. It has excellent lubricity, thermal conductivity and electrical insulating thermal conductivity. It also has neutron absorption capabilities. It is chemically inert to all forms of molten metal chemistry. The shaped article is simple to machine and has high resistance to moisture. As semiconductor chips are constantly developed, computing speed increases. The problem of chip heating is becoming a bottleneck that hinders chip technology development. For high-performance electronic chip development, thermal management is crucial. After three years of work, Wei Dayun (a researcher at Fudan University's Department of Polymer Science and Polymer Molecular Engineering) made remarkable progress in the field of interface modification of FET-type dielectric substrates. This work will provide a new technology to modify dielectric substrates to address the problem of chip heat loss.

Wei Dacheng's team devised a conformal hexagonal-boron-nitride (hBN) modification technology to address the problem of chip heat. This is also known as quasi-balanced PETCVD. Wei Dacheng says that the interfaces between the semiconductor and dielectric substrate are crucial to the heat dissipation of the chips.

Hexagonalboron nitride, which improves the interface of semiconductor and dielectric substrats, is an ideal material for dielectric substrate modification. Numerous studies show that hexagonal-boron nitride modification can reduce surface roughness and impact on carrier transport, and improve device carrier mobility. The potential use of hexagonalboron nitride for interface heat dissipation has been overlooked.

"The heating problem of a device is a key factor in carrier mobility. The lower the mobility, the more heat is generated at the same current. How to release heat determines how heat is dissipated. Wei Dacheng explained that the heat dissipation is related to how the heat is released. Conformal hexagonalboron nitride bonds to the material completely, with no gaps between the layers. Furthermore, no impurities are added to the mixture, which makes it more favorable for good results.

"This technology, developed by our team," Wei Dacheng says, conformal hexagonalboron is nitride modification. The device's mobility is significantly increased; the interface thermal resistance decreases; and the maximum power density of device operation is increased 2 to 4-folds, which is more than the power density the existing computer CPU.

This technology offers a unique solution to chip heat dissipation and high universality. It can be used with transistor devices that are based on tungstenselende materials. The technology can be extended to other materials to further enhance its utility for many more application areas. The PECVD technology, which was used in this research, is a common manufacturing process used in the chip manufacturing sector. This makes the conformal hexagonal Boron Nitride have great potential for large scale production and application.

Future research will include the development of field-effect transistor electric materials. These will include conjugated organic molecules (Macromolecules), low-dimensional nanomaterials, and research on the design principles for field transistor devices.

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