GaN is a semiconductor material of third generation with a large forbidden-band width. It has superior properties compared to first-generation Si or second-generation GaAs.
GaN devices, due to their high thermal conductivity and large band gaps, can operate at temperatures over 200 degC. This allows them to carry higher energy densities and greater reliability. A larger forbidden band and dielectric break-down electric field can reduce the on resistance of the device. This is good for improving the overall efficiency of the product.

GaN semiconductors can therefore be designed to have a higher bandwidth, higher amplifying gain, higher energy efficiency and smaller size. These characteristics are consistent with "tonality", the standard of the semiconductor market.

The GaN base station amplifier is perfect for 5G. Gallium nitride, gallium arsenide and indium phosphide are common semiconductor materials used in radio frequency applications.

GaN devices have better frequency characteristics than other high-frequency technologies such as indium phosphide and gallium arsenide. GaN devices must have a higher instantaneous bandwith. This can be achieved by using carrier aggregation, preparing higher frequency carriers and using carrier aggregation.

GaN can achieve higher power density than silicon. GaN has a higher power density. GaN's small size is an advantage when it comes to a power level. Smaller devices can reduce device capacitance, making it easier to design higher bandwidth systems. Power Amplifiers (PA) are a critical component of the RF Circuit.

Currently, power amplifiers consist primarily of a gallium-arsenide power amplifier and a complementary metallic oxide semiconductor power amplifier (CMOSPA), where GaAs is the dominant technology. However, with 5G coming, GaAs devices won't be able maintain high integration for such high frequencies.

GaN will be the next hot topic. GaN, as a wide-bandgap semiconductor, can withstand greater operating voltages. This results in higher power density. It also means higher operating temperatures.

Qualcomm President Cristiano Amon said at the Qualcomm 5G/4G Summit that the first 5G smartphones will be available in the second half of 2019, and by the end Christmas and New Year. According to reports 5G is expected to be up to 100 times more efficient than 4G networks. It will reach Gigabits per second and reduce latency.

As well as the increase in base station density and number, there will be a large increase in RF devices. As a result, in comparison with the 3G/4G eras, 5G devices will have a dozens or even hundreds of times greater density. Therefore, cost control and silicon based GaN technology has a large cost advantage. It is possible to achieve a market breakthrough using silicon-based GaN technologies.

In the past, semiconductor technology has faced the commercialization challenge. GaN, which is currently in this stage, will also be costing more to civilians because of the increased demand for silicon-based devices.

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